A team from IBM Research claims to have made a breakthrough in computational memory by successfully using one million phase change memory (PCM) devices to run an unsupervised machine learning algorithm. Details of the research have been published in the journal Nature Communications.
The IBM team's PCM device was made from a germanium antimony telluride alloy stacked and sandwiched between two electrodes. "[T]his prototype technology is expected to yield 200x improvements in both speed and energy efficiency, making it highly suitable for enabling ultra-dense, low-power, and massively-parallel computing systems for applications in AI," according to a post on IBM Research's blog.
Source: Futurism (View full article)
Posted by Dan Corcoran on November 3, 2017 08:02 AM
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